Ferromagnetism and transport in Mn and Mg co-implanted GaAs
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Ferromagnetism in Mn- and Cr-Implanted AlGaP
Implantation of Mn or Cr at doses of 3–5 10 cm 2 into Si-doped Al0:24Ga0:76P epilayers on GaP substrates produced ferromagnetic ordering at temperatures up to 300 K. The results were similar to those obtained previously in p-type AlGaP(C), indicating that both electron and hole-doped AlGaP can exhibit ferromagnetism. In addition, the AlGaP results are similar to those for GaP so the magnitude o...
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OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...
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(Ga,Mn)As and (Ga,Mn)N are so called diluted magnetic semiconductors, i.e. semiconductor based materials made ferromagnetic by inclusion of a magnetic element—in this case Mn. This type of materials bridge over the incompatibilities in metal–semiconductor interfaces in electronics components and have an enormous potential for future spintronics applications, where both charge and spin degrees o...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2007
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/61/1/128